GlobalFoundries to launch 7nm-class FDX Fusion process in Dresden by 2028
The chipmaker returns to advanced FD-SOI development with a planar transistor node targeting automotive and edge AI applications.
Key points
- GlobalFoundries plans to begin production of its FDX Fusion process at its Dresden facility in 2028.
- The new node uses fully-depleted silicon-on-insulator technology rather than FinFET transistors.
- The process aims for more than twice the transistor density of the original 22FDX platform.
GlobalFoundries announced plans to manufacture chips using its new FDX Fusion process starting in 2028. According to Tom's Hardware, this marks the company's return to single-digit nanometer-class development after abandoning leading-edge FinFET work in 2018.
The FDX Fusion node relies on planar transistors built on fully-depleted silicon-on-insulator substrates. GlobalFoundries states the technology delivers 7nm-class digital performance and more than double the transistor density of its 22FDX process introduced around 2015. Production will occur at the Dresden, Germany facility.
Context and Background
GlobalFoundries halted development of its 7nm-class FinFET technology, which it co-developed with IBM, in 2018. That decision ended its pursuit of leading-edge nodes for several years. The new FDX Fusion announcement represents a shift toward advanced FD-SOI rather than a return to FinFET architectures.
The company has not disclosed specific transistor dimensions, contacted gate pitch, or minimum metal pitch for the new node. Tom's Hardware notes that the claim of 7nm-class digital performance remains ambiguous without these physical specifications. The focus is on integration and power efficiency rather than raw speed.
CEA-Leti, a research organization that has advanced FD-SOI technology for decades, commented on the announcement. Sébastien Dauvé, chief executive of CEA Leti, said the organization continues to shape the European roadmap for FD-SOI through its FAMES pilot line.
Who is Affected
The FDX Fusion process targets automotive, edge AI, industrial, robotics, and sensor devices. These markets prioritize low power consumption, high integration, and cost efficiency over maximum processing performance. The technology is designed for systems that require compact, energy-efficient components.
The process supports RF transistors with fT/fmax up to 0.5 THz, analog circuitry, and embedded nonvolatile memory. It also includes in-memory computing capabilities. This combination allows chips to process sensor data, execute AI inference, and communicate wirelessly without multiple separate integrated circuits.
GlobalFoundries intends to provide processor intellectual property based on MIPS, ARC, and RISC-V architectures. These IP cores are meant to accelerate product development for customers using the new fabrication node. The strategy emphasizes system-on-chip integration for specialized applications.
What should you do?
Chip designers and system architects should monitor GlobalFoundries' release of technical specifications for the FDX Fusion node. As the 2028 production date approaches, detailed documentation regarding power envelopes and integration capabilities will become available for evaluation.
Hardware vendors in automotive and industrial sectors should assess how the new FD-SOI process aligns with their long-term supply chain strategies. The shift from FinFET to advanced SOI may influence component selection for power-sensitive edge devices.
Security professionals should note that in-memory computing and embedded AI features introduce new attack surfaces. As these chips deploy in critical infrastructure, understanding their security models will be essential for risk assessment.
What to do and how to stay safe: GlobalFoundries
- Monitor vendor announcements for detailed technical specifications and security features of the FDX Fusion node.
- Evaluate how the shift to FD-SOI technology impacts power and performance requirements for your edge devices.
- Review supply chain strategies to ensure compatibility with new fabrication processes planned for 2028.
- Assess the security implications of in-memory computing and embedded AI in upcoming automotive and industrial chips.
General security guidance from the Threat Times newsroom. It is not confirmed advice from the organisations named in this story.
Frequently asked questions
When will GlobalFoundries start producing chips on the FDX Fusion process?
Production is planned to begin in 2028 at the company's facility in Dresden, Germany.
Does the FDX Fusion process use FinFET transistors?
No, the process uses planar transistors on fully-depleted silicon-on-insulator substrates, not FinFETs.
What industries is the FDX Fusion node targeting?
It targets automotive, edge AI, industrial, robotics, and sensor applications that prioritize power efficiency.
